Defects in H implanted GaAs studied by i
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J. Keinonen; E. Rauhala; J. RΓ€isΓ€nen; K. Saarinen; P. HautojΓ€rvi; C. Corbel
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Article
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1991
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Elsevier Science
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English
β 260 KB
Ion-beam and low-energy positron-beam techniques have been used to study damage and implanted ion distributions and their annealing behavior in semi-insulating GaAs after the room temperature implantation of 3 Γ 10~-1 x 10 ~7 60 keV H' cm -'. The redistribution of the implanted H during annealing wa