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Ion beam induced defects in solids studied by optical techniques

✍ Scribed by J.D. Comins; G.O. Amolo; T.E. Derry; S.H. Connell; R.M. Erasmus; M.J. Witcomb


Book ID
103863516
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
674 KB
Volume
267
Category
Article
ISSN
0168-583X

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πŸ“œ SIMILAR VOLUMES


Defects in H implanted GaAs studied by i
✍ J. Keinonen; E. Rauhala; J. RΓ€isΓ€nen; K. Saarinen; P. HautojΓ€rvi; C. Corbel πŸ“‚ Article πŸ“… 1991 πŸ› Elsevier Science 🌐 English βš– 260 KB

Ion-beam and low-energy positron-beam techniques have been used to study damage and implanted ion distributions and their annealing behavior in semi-insulating GaAs after the room temperature implantation of 3 Γ— 10~-1 x 10 ~7 60 keV H' cm -'. The redistribution of the implanted H during annealing wa