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Ion-beam induced atomic transport at the Sb/Ni interface

✍ Scribed by F. Shi; Th. Weber; W. Bolse; K.P. Lieb


Book ID
113284636
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
294 KB
Volume
80-81
Category
Article
ISSN
0168-583X

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## Abstract Ion beam mixing was used to improve the adhesion between deposited Cu film (400 Γ…) and polyimide (PI) substrate. Ar^+^ ion with the energy levels between 180 and 200 keV, and the dose between 10^14^ to 4 Γ— 10^16^ ions/cm^2^ were used. The surface analyses were carried out by Rutherford