Enhancing adhesion by ion beam-induced atomic mixing at the interface between copper film and polyimide substrate
✍ Scribed by S. K. Koh; K. D. Pae; N. G. Stoffel; D. L. Hart
- Publisher
- Society for Plastic Engineers
- Year
- 1990
- Tongue
- English
- Weight
- 462 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0032-3888
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✦ Synopsis
Abstract
Ion beam mixing was used to improve the adhesion between deposited Cu film (400 Å) and polyimide (PI) substrate. Ar^+^ ion with the energy levels between 180 and 200 keV, and the dose between 10^14^ to 4 × 10^16^ ions/cm^2^ were used. The surface analyses were carried out by Rutherford Backscattering Spectroscopy (SEM). RBS analysis, using 2 MeV He^+^ ions, showed mixing of Cu and FI and the mixing depended on the Ar^+^ energy and dose. The X‐ray study showed a very broad halo for deposited Cu film but the (111) peak appeared after the Ar^+^ implantation and the peak increased with Ar^+^ ion dose. Optical micrographs showed that Cu film formed circular bubbles after many thermal cycles when adhesion was poor and fracture cracks when adhesion was good.