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Ion beam assisted etching of silicon with bromine: The role of the adsorbed state

✍ Scribed by G.C. Tyrrell; I.W. Boyd; R.B. Jackman

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
523 KB
Volume
43
Category
Article
ISSN
0169-4332

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Porous Si was obtained by electrochemical etching of p-doped Si(1 0 0) and progressively irradiated with H + , He + or Ne 2+ ions. Photoluminescence (PL) spectra were obtained as a function of the displacement-per-atom parameter up to $0.01 level, which nearly extinguished emission. The PL quenching