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Ion beam analysis of the segregation and solubility of iridium during silicon crystallization

✍ Scribed by A. Almendra; A. Rodrı́guez; T. Rodrı́guez; A. Kling; M.F. da Silva; J.C. Soares; C. Ballesteros


Book ID
114165500
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
166 KB
Volume
190
Category
Article
ISSN
0168-583X

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Damage and recovery by electron and ion
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## Abstract Damage and recovery induced by electron and ion beam irradiation during AES analysis of silicon nitride and oxynitrides are discussed. The results show that after prolonged electron beam irradiation, a damage peak is induced in the Si LVV spectrum. The initial incubation time decreases