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InxGa1−xAs (x=0.25–0.35) grown at low temperature

✍ Scribed by J. M. Ballingall; P. Ho; J. Mazurowski; L. Lester; K. C. Hwang; J. Sutliff; S. Gupta; J. Whitaker


Book ID
112811730
Publisher
Springer US
Year
1993
Tongue
English
Weight
1017 KB
Volume
22
Category
Article
ISSN
0361-5235

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Rapid amorphization in InxGa1−xAs alloys
✍ W. Wesch; E. Wendler; Z.S. Hussain; S.M. Kluth; M.C. Ridgway 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 250 KB

The amorphization kinetics of In 0.53 Ga 0.47 As and In 0.20 Ga 0.80 As alloys has been investigated in comparison to its binary extremes as a function of the Ge ion fluence at room temperature and 15 K. The irradiated samples were analysed by means of Rutherford backscattering-channeling spectrosco