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Rapid amorphization in InxGa1−xAs alloys at temperatures between 15 K and 300 K

✍ Scribed by W. Wesch; E. Wendler; Z.S. Hussain; S.M. Kluth; M.C. Ridgway

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
250 KB
Volume
242
Category
Article
ISSN
0168-583X

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✦ Synopsis

The amorphization kinetics of In 0.53 Ga 0.47 As and In 0.20 Ga 0.80 As alloys has been investigated in comparison to its binary extremes as a function of the Ge ion fluence at room temperature and 15 K. The irradiated samples were analysed by means of Rutherford backscattering-channeling spectroscopy using an in situ technique in case of the 15 K experiments. Contrary to the Al x Ga 1Àx As alloys, the system In x Ga 1Àx As does not exhibit amorphization kinetics intermediate between those of its two binary extremes especially at room temperature. For In x Ga 1Àx As a smaller ion fluence is necessary to render the material amorphous at room temperature than GaAs or InAs. This surprising behaviour is explained in terms of differences in the In-As and Ga-As bond-lengths leading to strain at the atomic scale. We suggest irradiation-induced defect clusters or amorphous nuclei in In x Ga 1Àx As may serve to relieve residual strain and, consequently, retardation of dynamic annealing.

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