## Abstract A four layer GaAsβAl~x~Ga~1βx~As heterostructure photoluminescence spectrum measured at 77K has been compared with the results of investigations concerning the composition of this heterostructure, performed by using the electron microprobe JXAβ50A. The application of photoluminescence i
β¦ LIBER β¦
Investigations on junction temperature estimation based on junction voltage measurements
β Scribed by Z. Khatir; L. Dupont; A. Ibrahim
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 850 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0026-2714
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
A method of investigation of heterostruc
β
mgr T. BryΕkiewicz; Dr. M. A. Herman; mgr W. Lewandowski
π
Article
π
1975
π
John Wiley and Sons
π
English
β 338 KB
π 1 views
Quantum voltage measures based on high-t
β
V. I. Krzhimovskii; A. S. Katkov; E. D. Koltik; S. V. Kozyrev
π
Article
π
1991
π
Springer US
π
English
β 240 KB
Anomalous voltage modulation observed in
β
S. Barbanera; V. Boffa; U. Gambardella; R. Leoni; S. Matarazzo; F. Murtas; S. Pa
π
Article
π
1994
π
Elsevier Science
π
English
β 148 KB
The temperature dependence of parameters
The temperature dependence of parameters of Josephson junctions based on the high-Tc superconductors
β
B.A. Aminov; Ya.G. Ponomarev; M.V. Sudakova
π
Article
π
1991
π
Elsevier Science
π
English
β 160 KB
OBIC measurements on planar high-voltage
β
M. Frischholz; Th. Mandel; R. Helbig; G. Schmidt; A. Hammerschmidt
π
Article
π
1993
π
Elsevier Science
π
English
β 387 KB
Effect of selective ion-implanted p-GaN
β
Yun-Wei Cheng; Hung-Hsien Chen; Min-Yung Ke; Cheng-Pin Chen; Jian Jang Huang
π
Article
π
2009
π
Elsevier Science
π
English
β 344 KB
A low-junction-temperature light emitting diode (LED) by selectively ion-implantation in part of the ptype GaN layer is demonstrated. The junction temperature extracted from a forward voltage method of an ion-implanted LED is significantly lower than that of a conventional LED. Furthermore, the line