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A method of investigation of heterostructure for junction lasers based on photoluminescence measurements

✍ Scribed by mgr T. Bryśkiewicz; Dr. M. A. Herman; mgr W. Lewandowski

Publisher
John Wiley and Sons
Year
1975
Tongue
English
Weight
338 KB
Volume
10
Category
Article
ISSN
0232-1300

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✦ Synopsis

Abstract

A four layer GaAs–Al~x~Ga~1–x~As heterostructure photoluminescence spectrum measured at 77K has been compared with the results of investigations concerning the composition of this heterostructure, performed by using the electron microprobe JXA‐50A. The application of photoluminescence investigations of such heterostructures as a simple and convenient control method that can be used during the performance of a heterostructure laser has been proposed.

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