✦ LIBER ✦

Investigation of trap levels in GaAs schottky diodes by admittance spectroscopy

✍ Scribed by Hoffmann, H.-J. ;Reisser, H.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Investigation of Defect Levels in Mg-Dop

✍ N.D. Nguyen; M. Germain; M. Schmeits; B. Schineller; M. Heuken 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 119 KB 👁 1 views

Investigation of radiation defects in Ga

✍ Borkovskaya, O. Yu. ;Dmitruk, N. L. ;Konakova, R. V. ;Tkhorik, Yu. A. 📂 Article 📅 1978 🏛 John Wiley and Sons 🌐 English ⚖ 185 KB

Investigation of GaAs Schottky barrier d

✍ Titz, R. U. ;R�ser, H. P. ;Schwaab, G. W. ;Neilson, H. J. ;Wood, P. A. ;Crowe, T 📂 Article 📅 1990 🏛 Springer 🌐 English ⚖ 486 KB

Electron traps in CdS single crystals ob

✍ A. Kobayashi; T. Mori 📂 Article 📅 1979 🏛 Springer 🌐 English ⚖ 624 KB

Comparative study of admittance spectros

✍ M.R.H. Khan; M. Saji 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 359 KB

Deep Level Transient Spectroscopy of Mo/

✍ Lupo, M. G. ;Cola, A. ;Vasanelli, L. ;Valentini, A. 📂 Article 📅 1991 🏛 John Wiley and Sons 🌐 English ⚖ 524 KB