Study of deep levels in Schottky/CuInSe2
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A. M. Bakry; A. M. Elnaggar
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Article
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1996
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Springer US
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English
β 152 KB
Deep-level transient spectroscopy (DLTS) measurements performed on Schottky/CulnSe2 diodes are reported. So far, Cd(Zn)S has been used as a window n-type layer to prepare CulnSe2 diodes. The diffusion of such a layer introduced defects into Cd(Zn)S-CulnSe2 diodes. Thus, the importance of using Schot