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Investigation of Defect Levels in Mg-Doped GaN Schottky Structures by Thermal Admittance Spectroscopy

✍ Scribed by N.D. Nguyen; M. Germain; M. Schmeits; B. Schineller; M. Heuken


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
119 KB
Volume
228
Category
Article
ISSN
0370-1972

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