Investigation of the oxygen vacancy balance in ZnO ceramics by means of EPR
✍ Scribed by Völkel, G. ;Pöppl, A. ;Voigtsberger, B.
- Publisher
- John Wiley and Sons
- Year
- 1988
- Tongue
- English
- Weight
- 263 KB
- Volume
- 109
- Category
- Article
- ISSN
- 0031-8965
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A ZnO crystal, grown by the seeded chemical vapor transport method, was irradiated near room temperature with 1.5 MeV electrons. The resulting oxygen and zinc vacancies were characterized using optical absorption, photoluminescence (PL), and electron paramagnetic resonance (EPR). A broad absorption
## Abstract It is shown that the intensity of the oxygen vacancy (V~O~) related emission in ZnO at 2.45 eV correlates to the concentration of the donor level E4. E4 is located 530 meV below the conduction band and attributed to the V~O~^0/++^ recharging. Deep level transient spectroscopy (DLTS) exp