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Investigation of the electronic effects of dislocations by stem

✍ Scribed by S.J. Pennycook

Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
873 KB
Volume
7
Category
Article
ISSN
0304-3991

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We present a theory of the electronic energy levels and wave functions within GaN quantum dots (QDs), including the e ect of the strain ΓΏeld of a nearby dislocation and a full treatment of the built-in electrostatic potential. The QD carrier spectra and wave functions are calculated using a plane-wa