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Investigation of the effect of composition fluctuations on the parameters of variband light-emitting diodes of AlxGa1−xAs(Si):GaAs structures by the method of numerical simulation

✍ Scribed by V. V. Bednarskii; G. P. Peka


Publisher
Springer US
Year
1990
Tongue
English
Weight
310 KB
Volume
53
Category
Article
ISSN
0021-9037

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The hole wavefunctions, the energy levels and the sheet density of a strained p-Si/Si 1-x Ge x /p-Si selectively doped double heterojunction are investigated at T = 0 K, solving the Schrödinger and Poisson equations self-consistently. We present a systematic study taking into account all the modulat