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Investigation of Ta2O5/SiO2/4H-SiC MIS capacitors

✍ Scribed by P. Zhao; Rusli; B.K. Lok; F.K. Lai; C.C. Tin; J.H. Zhao; R.M. Yar

Book ID
108207528
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
126 KB
Volume
83
Category
Article
ISSN
0167-9317

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The electronic availability of ZnO thin film as a semiconducting material for MIS structure was investigated by depositing a dielectric Ta O thin layer. A ZnO (100 nm) thin film was deposited on p-Si by rf magnetron 2 5 sputtering. High frequency (1 MHz) capacitance-voltage (C-V ) and conductance-vo