Trap Levels in RF Sputtered CdS Thin Fil
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Ashour, H. ;El Akkad, F.
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Article
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2001
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John Wiley and Sons
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English
β 70 KB
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The trap levels in CdS thin films prepared by rf magnetron sputtering have been investigated using Photoinduced Current Transient Spectroscopy (PICTS). Trap levels in the range 0.08-1.06 eV have been detected. Those levels are tentatively attributed to native defects and foreign impurities (particul