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Optical properties in RF sputtered CuInxGa1−xSe2 thin films

✍ Scribed by Toshiyuki Yamaguchi; Jiro Matsufusa; Akira Yoshida


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
368 KB
Volume
70-71
Category
Article
ISSN
0169-4332

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The trap levels in CdS thin films prepared by rf magnetron sputtering have been investigated using Photoinduced Current Transient Spectroscopy (PICTS). Trap levels in the range 0.08-1.06 eV have been detected. Those levels are tentatively attributed to native defects and foreign impurities (particul