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Investigation of Oxygen-Related Luminescence Centres in AlN Ceramics

โœ Scribed by S. Schweizer; U. Rogulis; J.-M. Spaeth; L. Trinkler; B. Berzina

Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
149 KB
Volume
219
Category
Article
ISSN
0370-1972

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## Abstract The presence of boron in silicon has been shown to have a deleterious effect on the luminescence of interstitialโ€related centres, particularly the Wโ€centre which is often observed after ion implantation and a low temperature anneal. Competition between siliconโ€interstitial and boronโ€int