Tensile strained Si (sSi) layers were epitaxially deposited onto fully relaxed Si 0.78 Ge 0.22 (SiGe) epitaxial layers (4 m) on silicon substrates. Periodic arrays of 150 nm Γ 150 nm and 150 nm Γ 750 nm pillars with a height of 100 nm were fabricated into the sSi and SiGe layers by electronbeam lith
Investigation of mechanical strains in porous silicon by difference Raman spectroscopy
β Scribed by L. P. Avakyants; E. D. Obraztsova
- Publisher
- Springer US
- Year
- 1988
- Tongue
- English
- Weight
- 256 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0021-9037
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## Abstract In this paper, porous silicon (PS) layers of different porosity and thickness have been investigated by Raman spectroscopy. The estimation of builtβin strain in PS is reported. Moreover, wetting phenomena in PS layers have been also investigated. The results prove a reversible blue shif