Investigation of Localized and Conventional Photoluminescence in an Asymmetric Quantum Well
β Scribed by Morais, P.C. ;Sakai, J.W.L.
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 116 KB
- Volume
- 187
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
Conventional and localized photoluminescence (PL) are investigated in an n-type asymmetrically doped InGaAs/InP quantum well (QW), using focused laser-beam excitation. We observed a novel red shift in the PL spectra and also the presence of an additional transition, under high optical excitation intensity. We provide evidence that these observations are related to the occurrence of photocarrier accumulation in the QW in a process distinct from the well-known optical control of the electron accumulation.
π SIMILAR VOLUMES
Electronic Bragg mirrors were used to conΓΏne carriers at energy levels above the barrier height in asymmetric coupled quantum wells. Two classes of above barrier states were resolved by using photoluminescence, photoluminescence excitation and modulated resonant Raman spectroscopy. The ΓΏrst class is
The photoluminescence efficiency from quantum well is experimentally known to vary markedly depending on the well-width, whose interpretation is given in our recent paper [Phys. Rev. ~4, 2500 (1986)]. The emission efficiency is affected by whether the electron transferred from the barrier into the h