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Investigation of doping in Si crystals by means of electroreflectance

✍ Scribed by G. Geddo; D. Maghini; A. Stella


Book ID
112754211
Publisher
Italian Physical Society
Year
1983
Tongue
English
Weight
576 KB
Volume
2
Category
Article
ISSN
0392-6737

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Deep level characteristics in undoped and Si-doped Ga05tIn049P layers has been investigated using photocapacitance and photoluminescence (PL) methods. Ga0.5~In049P layers were grown by metalorganic vapor-phase epitaxy in the temperature range 600-730 Β°C and with doping levels from 3.9 x l0 w cm -~ t