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Investigation of cross-contamination during Si-implantion in GaAs with SIMS

✍ Scribed by M. Meuris; W. Vandervorst; H. E. Maes

Book ID
104592167
Publisher
John Wiley and Sons
Year
1988
Tongue
English
Weight
349 KB
Volume
12
Category
Article
ISSN
0142-2421

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Theoretical and experimental studies of the broadening of dilute delta-doped Si spikes in GaAs during SIMS depth profiling
✍ R. Badheka; M. Wadsworth; D. G. Armour; J. A. van den Berg; J. B. Clegg πŸ“‚ Article πŸ“… 1990 πŸ› John Wiley and Sons 🌐 English βš– 905 KB

## Abstract Delta‐doped structures represent a powerful class of test structures to investigate the experimental and fundamental factors limiting the depth resolution obtainable in SIMS sputter depth profiling. In this work, theoretical studies of the effects on the broadening of an Si delta spike