An InGaAS/GaAs heterostructure transistor utilizing a graded In x Ga 1-x As channel grown by low-pressure metal-olorganic chemical vapor deposition has been demonstrated. A negative differential resistance (NDR) phenomenon is observed. Electron mobilities are significantly improved by using the grad
✦ LIBER ✦
Investigation of an InGaAsGaAs doped-channel MIS-like pseudomorphic transistor
✍ Scribed by Lih-Wen Laih; Jung-Hui Tsai; Wen-Chau Liu; Wei-Chou Hsu; Wen-Shiung Lour
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 611 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0038-1101
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