𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Investigation of an InGaAsGaAs doped-channel MIS-like pseudomorphic transistor

✍ Scribed by Lih-Wen Laih; Jung-Hui Tsai; Wen-Chau Liu; Wei-Chou Hsu; Wen-Shiung Lour


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
611 KB
Volume
38
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Investigation of a graded channel InGaAs
✍ Yih-Juan Li; Jan-Shing Su; Yu-Shyan Lin; Wei-Chou Hsu 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 154 KB

An InGaAS/GaAs heterostructure transistor utilizing a graded In x Ga 1-x As channel grown by low-pressure metal-olorganic chemical vapor deposition has been demonstrated. A negative differential resistance (NDR) phenomenon is observed. Electron mobilities are significantly improved by using the grad

Analytic modelling for current–voltage c
✍ Ching-Sung Lee; Wei-Chou Hsu 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 265 KB

A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAs/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In 0.15 Ga 0.85 As channel, have