✦ LIBER ✦

Investigation of a graded channel InGaAs/GaAs heterostructure transistor

✍ Scribed by Yih-Juan Li; Jan-Shing Su; Yu-Shyan Lin; Wei-Chou Hsu

Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 154 KB
Volume: 28
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.2000.0849

No coin nor oath required. For personal study only.

✦ Synopsis

An InGaAS/GaAs heterostructure transistor utilizing a graded In x Ga 1-x As channel grown by low-pressure metal-olorganic chemical vapor deposition has been demonstrated. A negative differential resistance (NDR) phenomenon is observed. Electron mobilities are significantly improved by using the graded InGaAs channel. For the In composition varying from x = 0.25 (at the buffer-channel interface) to x = 0.1 (at the spacer-channel interface) structure, a peak extrinsic transconductance of 24.6 S mm -1 (at V DS = 6.5 V, V GS step = -0.5 mV) and a saturation current density as high as 555 mA mm -1 for a gate length of 1.5 µm are obtained.

📜 SIMILAR VOLUMES

A 2DEG/low-temperature-grown GaAs dual c

A 2DEG/low-temperature-grown GaAs dual channel heterostructure transistor

✍ E.B. Cohen; D.B. Janes; K.J. Webb; J.N. Shenoy; J.M. Woodall; M.R. Melloch 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 225 KB

Investigation of an InGaP/GaAs heterostr

Investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with reduced potential spike

✍ Shiou-Ying Cheng 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 297 KB

In this work, an improved InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with an InGaP wide-bandgap collector is investigated. In the emitter-base region, the thin narrow bandgap n-type GaAs layer is sandwiched between a wide-bandgap N-type InGaP confinement layer and a narrow-bandgap

Analytic modelling for current–voltage c

Analytic modelling for current–voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors

✍ Ching-Sung Lee; Wei-Chou Hsu 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 265 KB

A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAs/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In 0.15 Ga 0.85 As channel, have

Behaviour of surface states on a GaAs/Al

Behaviour of surface states on a GaAs/AlGaAs heterostructure investigated by capacitance spectroscopy

✍ K. Ali; E. Skuras; S. Vallis; A.R. Long; I.A. Larkin; J.H. Davies; M.C. Holland; 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 42 KB

Low temperature depletion capacitance-voltage data, taken from a novel open design of surface superlattice fabricated on a GaAs/AlGaAs heterostructure, are compared with two theoretical models. These assume either that the Fermi level on the free semiconductor surface is pinned, or that the surface