๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Investigation and optimization of InGaAs/InP heterointerfaces grown by chemical beam epitaxy using spectroscopic ellipsometry and photoluminescence

โœ Scribed by M. E. Sherwin; F. L. Terry; G. O. Munns; J. S. Herman; E. G. Woelk; G. I. Haddad

Book ID
112817454
Publisher
Springer US
Year
1992
Tongue
English
Weight
653 KB
Volume
21
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

SIMS analysis of InP, GaAs and InGaAs la
SIMS analysis of InP, GaAs and InGaAs layers grown by chemical beam epitaxy
โœ Y. Gao; S. Godefroy; J. L. Benchimol; F. Alaoui; F. Alexandre; K. Rao ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 364 KB

## Abstract SIMS analysis was applied to the characterization of InP, GaAs and InGaAs grown by chemical beam expitaxy (CBE). It includes the control of purity and doping, and the determination of growth rate and matrix composition. Some important characteristics of CBE growth, such as carbon incorp