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The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy

โœ Scribed by T.B. Joyce; T.L. Pfeffer; T.J. Bullough; G. Petkos; P.J. Goodhew; A.C. Jones


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
430 KB
Volume
150
Category
Article
ISSN
0022-0248

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