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Inverse-Geometry Dependence of MOS Transistor Electrical Parameters

โœ Scribed by Hsu, M.C.; Sheu, B.J.


Book ID
118698229
Publisher
IEEE
Year
1987
Tongue
English
Weight
525 KB
Volume
6
Category
Article
ISSN
0278-0070

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Explicit geometry dependence of MOS tran
โœ Sudhir M. Gowda; Bing J. Sheu ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Springer ๐ŸŒ English โš– 726 KB

The pseudoboundary method is an engineering technique to extend the use of a single parameter set over the entire geometric design space for VLSI circuits. The technique eliminates adverse effects, such as negative output conductance, by clamping the evaluation of geometric dependence terms at the s