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A new measurement method of MOS transistor parameters

✍ Scribed by C. Ciofi; M. Macucci; B. Pellegrini

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
338 KB
Volume
33
Category
Article
ISSN
0038-1101

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## Abstract A new adaptive measurement algorithm is described for the control of an automated __S__‐parameter measurement set‐up used to characterize transistors for non‐linear modelling. The procedure differs from previous algorithms in that is uses both the device DC‐ and __S__‐parameter data to