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Explicit geometry dependence of MOS transistor parameters by the pseudoboundary method

✍ Scribed by Sudhir M. Gowda; Bing J. Sheu

Publisher
Springer
Year
1992
Tongue
English
Weight
726 KB
Volume
2
Category
Article
ISSN
0925-1030

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✦ Synopsis

The pseudoboundary method is an engineering technique to extend the use of a single parameter set over the entire geometric design space for VLSI circuits. The technique eliminates adverse effects, such as negative output conductance, by clamping the evaluation of geometric dependence terms at the systematically determined boundaries of a primary region. The use of this technique is essential for accurate simulation of analog and digital circuits as well as prediction of circuit performance using next-generation submicron VLSI fabrication technologies. Results demonstrating the effectiveness of the technique using the widely accepted Berkeley short-channel IGFET model (BSIM) are presented, with data from transistors of different geometries ranging from 0.5 to 70/zm.

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