Mesotaxy by nickel diffusion into a buri
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Yu.N. Erokhin; R. GrΓΆtzschel; S.R. Oktyabrsky; S. Roorda; W. Sinke; A.F. Vyatkin
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Article
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1992
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Elsevier Science
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English
β 441 KB
A novel method to produce a buried epitaxial silicide in silicon is described. Metal atoms are deposited onto the surface of a piece of crystalline silicon (c-Si) which contains a buried amorphous silicon (a-Si) layer in the "as-implanted" state. Prolonged heating at 350 Β°C leads to diffusion of met