Intrinsic hole localization mechanism in magnetic semiconductors
β Scribed by Raebiger, H; Ayuela, A; Nieminen, R M
- Book ID
- 121880849
- Publisher
- Institute of Physics
- Year
- 2004
- Tongue
- English
- Weight
- 245 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0953-8984
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Results of millikelvin resistance studies of barely metallic n-Cdl\_xMnzSe, n-Cdx\_xFexSe, and n-Cdl\_,Zn, Se, doped with In or Sc, are presented and discussed in terms of the formation of bound magnetic polarβ’as at the localization boundary. Previous conductivity studies of n-type Cdl-xMn, Se [1,2
We studied the electron and hole spin dynamics in magnetic semiconductor quantum wells on pico-and femtosecond time scales by means of time-resolved magnetization modulation spectroscopy. Spin relaxation times of $10 ps (electrons) and $100 to 200 fs (holes) are found at room temperature for 15/15 m