Temperature dependent localization in diluted magnetic semiconductors

✍ Scribed by P. Gło´d; T. Dietl; M. Sawicki; I. Miotkowski

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 155 KB
• Volume: 194-196
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(94)90827-3

✦ Synopsis

Results of millikelvin resistance studies of barely metallic n-Cdl_xMnzSe, n-Cdx_xFexSe, and n-Cdl_,Zn, Se, doped with In or Sc, are presented and discussed in terms of the formation of bound magnetic polar•as at the localization boundary.

Previous conductivity studies of n-type Cdl-xMn, Se [1,2] and Cdl_,MnxTe [3] in the vicinity of the metal-insulator transition (MIT) revealed a strong increase of resistivity with decreasing temperature, a behavior much different than that of nonmagnetic n-CdSe [1,2,4]. In order to shed some light on the phenomenon we carried out resistivity measurements for a number of systems. Temperature dependencies of the conductivity a(T) for various metallic samples are