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Polaronic hole localization and multiple hole binding of acceptors in oxide wide-gap semiconductors

โœ Scribed by Lany, Stephan; Zunger, Alex


Book ID
120348710
Publisher
The American Physical Society
Year
2009
Tongue
English
Weight
330 KB
Volume
80
Category
Article
ISSN
1098-0121

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## Abstract LaCuOSe is a wide gap (__E__~g~โ€‰=โ€‰2.8โ€‰eV) pโ€type semiconductor. Epitaxial films may be converted to a degenerate semiconductor with hole concentrations (__n__~h~)โ€‰>โ€‰1โ€‰ร—โ€‰10^21^โ€‰cm^โˆ’3^ by doping Mg ions to the La sites. We, however, found that the Mg concentration in the highest __n__~h~