✦ LIBER ✦

Intrinsic gettering of 300 mm CZ wafers

✍ Scribed by F. Bialas; R. Winkler; H. Dietrich

Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 542 KB
Volume: 56
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(00)00520-7

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

In-line monitoring of 300 mm silicon epi

In-line monitoring of 300 mm silicon epitaxial and CZ wafers using surface charge profiler

✍ E. Kamieniecki; T. Bickl; J. Tower 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 612 KB

Intrinsic gettering of Cr impurities in

Intrinsic gettering of Cr impurities in p-type Cz silicon

✍ Adegboyega, G. A. ;Poggi, A. 📂 Article 📅 1990 🏛 John Wiley and Sons 🌐 English ⚖ 424 KB

Effect of native point defects on morpho

Effect of native point defects on morphology of gettering centres in CZ-silicon wafers

✍ K.L. Enisherlova; T.F. Rusak; M.G. Mil'vidskii; V.J. Reznick 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 381 KB

A study on surface grinding of 300 mm si

A study on surface grinding of 300 mm silicon wafers

✍ Z.J Pei 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 175 KB

Most of today's IC chips are made from 200 mm or 150 mm silicon wafers. It is estimated that the transition from 200 mm to 300 mm wafers will bring a die cost saving of 30-40%. To meet their customers' needs, silicon wafer manufacturers are actively searching for cost-effective ways to manufacture 3

Challenges for economical growth of high

Challenges for economical growth of high quality 300 mm CZ Si crystals

✍ Erich Tomzig; Wilfried von Ammon; Erich Dornberger; Ulrich Lambert; Werner Zuleh 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 911 KB

The changeover from 200 mm to 300 mm is required by the semiconductor industry due to the necessity for larger chip sizes and demand for decreasing cost. However, the cost for 300 mm crystal growth is likely to rise owing to larger puller, enlargement of hot zone, expensive silica crucibles and long

Growth and stress analysis of necks for

Growth and stress analysis of necks for 300 mm CZ silicon single crystals

✍ H. Tu; J. Cheng; Q. Chang; Q. Zhou; J. Wang; G. Zhang; F. Fang 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 249 KB

Growth of large diameter necks is of great importance for 300 mm silicon single crystals. Tensile tests for necks with different diameter have been made, and then the fracture morphology of the necks has been analyzed by scanning electron microscopy (SEM). The surface morphology demonstrates that th