Intrinsic conductive oxide–p-InSe solar cells
✍ Scribed by Z.D Kovalyuk; V.M Katerynchuk; A.I Savchuk; O.M Sydor
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 186 KB
- Volume
- 109
- Category
- Article
- ISSN
- 0921-5107
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📜 SIMILAR VOLUMES
The solar cell structure consists of a shallow n+-p junction prepared on a p-type silicon substrate using phosphorus diffusion at a temperature of 800 °C. A conductive layer of indium tin oxide is then deposited by spray pyrolysis. Both polycrystalline and monocrystalline silicon have been used. Th
hand, This balance generally results in a temperature in the town that is slightly higher than in the surrounding country. Using solar energy saves imported fuels on one hand, but increases the absorption of solar radiation on the other hand. Simple, steady state models are used to assess the channe
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