𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Interwell Carrier Distribution in InAlGaAs Quantum Well Laser Structures

✍ Scribed by S. Marcinkevičius; H. Hillmer; R. Lösch; K. Fröjdh; U. Olin

Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
130 KB
Volume
204
Category
Article
ISSN
0370-1972

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Orientational dependence of hole effecti
Orientational dependence of hole effective masses in quantum-well laser structures
✍ M. Kucharczyk; M.S. Wartak 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 127 KB

Valence energy subbands and hole effective masses for quantum-well structures have been calculated, using GaInAs-InGaAsP and GaAs-AlGaAs material systems as an example. A Luttinger-Kohn 4 × 4 hamiltonian with heavy-hole and light-hole band mixing was used in the calculations. Systematic numerical re

Theory of carrier gain dynamics in InGaA
Theory of carrier gain dynamics in InGaAs/AlGaAs strained-layer single-quantum-well diode lasers
✍ G.D. Sanders; C.J. Stanton; C.-K. Sun; B. Golubovic; J.G. Fujimoto 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 324 KB

Calculations of the femtosecond gain dynamics in InGaAs/AlGaAs strained-layer single-quantum-well diode lasers are presented and compared to experiments which use a novel multiple-wavelength pump probe technique. We develop a detailed theoretical model for the gain dynamics in a quantum well laser d