Free-Carrier Absorption in Quantum Well Structures for Alloy-Disorder Scattering
β Scribed by G.B. Ibragimov
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 89 KB
- Volume
- 231
- Category
- Article
- ISSN
- 0370-1972
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π SIMILAR VOLUMES
Unscreened ions are frequently the dominant source of carrier scattering, in particular for electrons in barriers of quantum wells. A new model is introduced for this mechanism in which the Coulomb potential is limited to half the distance between nearest ions. Previously this mechanism was analyzed
The properties of excitonic states in pseudomorphic, (100)- and (311)-oriented \(\mathrm{In}_{0.2} \mathrm{Gr}_{0}{ }_{8} \mathrm{As} / \mathrm{GaAs}\) quantum well (QW) structures are investigated. Strained QW's with different states of strain and segregation were grown by molecular beam epitaxy. N