✦ LIBER ✦

Intersubband transitions for single, double and triple Si -doped GaAs layers

✍ Scribed by Ozturk, Emine; Sokmen, Ismail

Book ID: 127209330
Publisher: Institute of Physics
Year: 2003
Tongue: English
Weight: 439 KB
Volume: 36
Category: Article
ISSN: 0022-3727
DOI: 10.1088/0022-3727/36/20/006

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

GaAs delta-doped layers in Si for evalua

GaAs delta-doped layers in Si for evaluation of SIMS depth resolution GaAs

✍ D. W. Moon; J. Y. Won; K. J. Kim; H. J. Kim; H. J. Kang; M. Petravic 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 153 KB 👁 1 views

Due to the complicated artefacts in SIMS depth profiling, SIMS depth resolution is difficult to evaluate. For evaluation of the SIMS depth resolution, delta-doped layers are more useful than sharp interfaces, because the matrix effect and the sputtering rate change can be minimized in profiling thro

MBE growth and electrical behaviour of s

MBE growth and electrical behaviour of single and double Si δ-doped InGaAs-layers

✍ W. Passenberg; H. G. Bach; J. Böttcher 📂 Article 📅 1991 🏛 Springer US 🌐 English ⚖ 260 KB

Conductivity and persistent photoconduct

Conductivity and persistent photoconductivity in GaAs epitaxial films containing single and double delta-doped layers

✍ V. V. Valyaev; V. L. Gurtovoi; D. Yu. Ivanov; S. V. Morozov; V. V. Sirotkin; Yu. 📂 Article 📅 1998 🏛 Springer 🌐 English ⚖ 91 KB

Subband population and electron subband

Subband population and electron subband mobility for two interacting Si-δ-doping layers in GaAs

✍ P.M. Koenraad; A.C.L. Heessels; F.A.P. Blom; J.A.A.J. Perenboom; J.H. Wolter 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 354 KB

A simple expression for band gap narrowi

A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers : S. C. Jain and D. J. Roulston. Solid-St. Electron.34(5), 453 (1991)

📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 133 KB