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A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers : S. C. Jain and D. J. Roulston. Solid-St. Electron.34(5), 453 (1991)


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
133 KB
Volume
32
Category
Article
ISSN
0026-2714

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