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Interoperability of 10 Gb/s modulator driver and InP EAM


Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
90 KB
Volume
14
Category
Article
ISSN
0961-1290

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## Abstract This paper presents research on device parameters for a 2.5โ€“10โ€Gb/s high electron mobility transistor (HEMT) modulator driver IC. The effect of DC and capacitance parameters on the driver IC is discussed, and their ability to meet the requirements of the driver IC are calculated. The re

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