Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission

✍ Scribed by Q. Zhao; J.Q. Pan; J. Zhang; B.X. Li; F. Zhou; B.J. Wang; L.F. Wang; J. Bian; L.J. Zhao; W. Wang

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 168 KB
• Volume: 260
• Category: Article
• ISSN: 0030-4018
• DOI: 10.1016/j.optcom.2005.11.014

✦ Synopsis

A strained InGaAsP-InP multiple-quantum-well DFB laser monolithically integrated with electroabsorption modulator by ultralow-pressure (22 mbar) selective-area-growth is presented. The integrated chip exhibits superior characteristics, such as low threshold current of 19 mA, single-mode operation around 1550 nm range with side-mode suppression ratio over 40 dB, and larger than 16 dB extinction ratio when coupled into a single-mode fiber. More than 10 GHz modulation bandwidth is also achieved. After packaged in a compact module, the device successfully performs 10-Gb/s NRZ transmission experiments through 53.3 km of standard fiber with 8.7 dB dynamic extinction ratio. A receiver sensitivity of À18.9 dBm at bit-error-rate of 10 À10 is confirmed.