✦ LIBER ✦
Model device parameters for a 10-Gb/s HEMT modulator driver IC
✍ Scribed by Gao Jianjun; Gao Baoxin; Pan Bo; Liang Chunguang
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 165 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
This paper presents research on device parameters for a 2.5–10‐Gb/s high electron mobility transistor (HEMT) modulator driver IC. The effect of DC and capacitance parameters on the driver IC is discussed, and their ability to meet the requirements of the driver IC are calculated. The results shown agree with experimental data. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 357–360, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10606