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Internal Photoemission Measurements in a Metal-Al2O3[Single Bond]Si System

✍ Scribed by Szydlo, N.

Book ID
121821983
Publisher
American Institute of Physics
Year
1971
Tongue
English
Weight
328 KB
Volume
42
Category
Article
ISSN
0021-8979

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Energy barriers between (100)Si and Al2O
Energy barriers between (100)Si and Al2O3 and ZrO2-based dielectric stacks: internal electron photoemission measurements
✍ V.V Afanas’ev; M Houssa; A Stesmans; G.J Adriaenssens; M.M Heyns πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 132 KB

Electron energy barriers between the valence band of (100)Si and the conduction bands of ultrathin Al O and ZrO 2 3 2 insulators grown by atomic-layer deposition were determined using internal photoemission of electrons. The barriers for Al O and ZrO are found to be 3.2560.08 and 3.160.1 eV, respect