Energy barriers between (100)Si and Al2O3 and ZrO2-based dielectric stacks: internal electron photoemission measurements
✍ Scribed by V.V Afanas’ev; M Houssa; A Stesmans; G.J Adriaenssens; M.M Heyns
- Book ID
- 104305650
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 132 KB
- Volume
- 59
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
Electron energy barriers between the valence band of (100)Si and the conduction bands of ultrathin Al O and ZrO 2 3 2 insulators grown by atomic-layer deposition were determined using internal photoemission of electrons. The barriers for Al O and ZrO are found to be 3.2560.08 and 3.160.1 eV, respectively, i.e. significantly lower than for SiO (4.2560.05 2 3 2 2 eV). Thermal oxidation at 650-8008C strongly suppresses tunneling current through enhancement of the barriers at the Si /Al O and Si / ZrO interfaces. However, it does not reduce the high density of band tail states in the insulators suggesting 2 3 2
that silicates are formed.