Interfacial and breakdown characteristics of MOS devices with rapidly grown ultrathin SiO2gate insulators

✍ Scribed by Moslehi, M.M.; Shatas, S.C.; Saraswat, K.C.; Meindl, J.D.

• Book ID: 114596016
• Publisher: IEEE
• Year: 1987
• Tongue: English
• Weight: 462 KB
• Volume: 34
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1987.23098