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Interface recombination velocity and lifetime in GaAs and AlGaAs/GaAs structures

✍ Scribed by J.M. Borrego; S.K. Ghandhi

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
315 KB
Volume
33
Category
Article
ISSN
0038-1101

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πŸ“œ SIMILAR VOLUMES

Oval Defects in the MBE Grown AlGaAs/InG
Oval Defects in the MBE Grown AlGaAs/InGaAs/GaAs and InGaAs/GaAs Structures
✍ K. Klima; M. Kaniewska; K. Reginski; J. Kaniewski πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 93 KB

Oval defects were investigated on the surface of complex AlGaAs/InGaAs/GaAs and InGaAs/GaAs multilayer structures grown by molecular beam epitaxy and the results were compared with that obtained for bulk GaAs layers grown by the same technique. The oval defect density was correlated with the gallium