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Comparative analysis of microwave noise in GaAs and AlGaAs/GaAs channels

✍ Scribed by V. Aninkevičius; V. Bareikis; J. Liberis; A. Matulionis; P. Sakalas


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
515 KB
Volume
36
Category
Article
ISSN
0038-1101

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## Abstract An accurate charge‐control approach to analytical noise modeling of a high electron mobility transistor, which provides excellent results in agreement with the experimental data, is presented. The small‐signal parameters, and the drain and gate‐noise sources are calculated to determine