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Interface properties of a-Si:H/Si3N4+x and a-Si:H/SiO2 elucidated by plas and its improvement by the atomic hydrogen

✍ Scribed by S. Nitta; H. Miyazima; M. Mukai; S. Nonomura; S.Q. Gu; P.C. Taylor

No coin nor oath required. For personal study only.

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