Improving the reliability and the insulation properties of gate oxide in the gate injection mode by using a new procedure of (100) Si surface and Si/SiO2 interface treatments

✍ Scribed by Ohkawa, T.; Nakamura, O.; Sugawa, S.; Aharoni, H.; Ohmi, T.

• Book ID: 114538986
• Publisher: IEEE
• Year: 2001
• Tongue: English
• Weight: 85 KB
• Volume: 48
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.974737